FJD5553 ? npn silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com FJD5553 rev. a1 1 april 2008 FJD5553 npn silicon transistor high voltage switch mode application ? fast speed switching ? wide safe operating area ? suitable for electronic ballast application absolute maximum ratings * t c =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics t a =25 c unless otherwise noted * device mounted on minimum pad size ordering information symbol parameter value units bv cbo collector-base voltage 1050 v bv ceo collector-emitter voltage 400 v bv ebo emitter-base voltage 14 v i c collector current (dc) 3 a i cp collector cu rrent (pulse) 6 a i b base current (dc) 1 a i bp collector cu rrent (pulse) 2 a p c collector dissipation 1.25 w t j junction temperature 150 c t stg storage junction temperature range - 55 ~ 150 c symbol parameter value units r ja thermal resistance, junction to ambient 100 c/w part number marking package packing method remarks FJD5553tm j5553 d-pak tape & reel 1. base 2. collector 3. emitter 1 dpak marking : j5553
FJD5553 ? npn silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com FJD5553 rev. a1 2 electrical characteristics * t c =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter conditions min. typ. max units bv cbo collector-base breakdown voltage i c =500 a, i e =0 1050 v bv ceo collector-emitter breakdown voltage i c =5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e =500 a, i c =0 14 v h fe * dc current gain v ce =5v, i c =10ma 10 v ce =3v, i c =0.4a 30 60 v ce (sat) collector-emitter saturation voltage i c =1a, i b =0.2a 0.23 0.5 v v be (sat) base-emitter saturation voltage i c =1a, i b =0.2a 1.2 v c ob output capacitance v cb =10v, f=1mhz 45 pf t on turn on time v cc =125v, i c =0.5a i b1 =45ma, i b2 =0.5a r l =250 ? 1.0 s t stg storage time 1.2 s t f fall time 0.3 s t on turn on time v cc =250v, i c =2.5a i b1 =0.5a, i b2 =1.0a r l =100 ? 2.0 s t stg storage time 2.5 s t f fall time 0.3 s eas avalanche energy l= 2mh 3.5 mj
FJD5553 ? npn silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com FJD5553 rev. a1 3 typical characteristics figure 1. dc current gain figure 2. saturation voltage figure 3. saturation voltage figure 4. resistive load switching figure 5. resistive load switching figure 6. power derating 0.01 0.1 1 10 1 10 100 v ce = 5v ta = 25 o c ta = 75 o c ta = 125 o c ta = - 25 o c h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 100 1000 ta = 25 o c ta = 75 o c i c = 5 i b ta = 125 o c ta = - 25 o c v ce (sat) [mv], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 ta = 125 o c ta = 75 o c ta = 25 o c ta = - 25 o c i c = 5 i b v be (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 t f t stg v cc =125v i b1 =45ma, i b2 =0.5a t stg & t f [ns], switching time i c [a], collector current 0.1 1 10 10 100 1000 10000 t f t stg v cc =250v i b1 =0.5a, i b2 =1.0a t stg & t f [ns], switching time i c [a], collector current 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 p c [w], power dissipation tc[ o c], case temperature
FJD5553 ? npn silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com FJD5553 rev. a1 4 mechanical dimensions d-pak dimensions in millimeters
FJD5553 npn silicon transistor FJD5553 ? 2008 fairchild semiconductor corporation www.fairchildsemi.com FJD5553 rev. a1 5 rev. i31 trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semic onductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant inju ry to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; suppleme ntary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only.
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